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Si4804CDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
?
Halogen-free
V DS (V)
R DS(on) ( Ω )
I D (A) a
Q g (Typ.)
?
TrenchFET ? Power MOSFET
30
0.022 at V GS = 10 V
0.027 at V GS = 4.5 V
8
7.9
7
?
?
100 % R g Tested
100 % UIS Tested
RoHS
COMPLIANT
APPLICATIONS
? DC/DC
? Notebook System Power
SO- 8
D 1
D 2
S 1
G 1
1
2
8
7
D 1
D 1
S 2
G 2
3
4
6
5
D 2
D 2
G 1
G 2
Top V ie w
Orderin g Information: Si4 8 04CDY-T1-GE3 (Lead (P b )-free and Halogen-free)
S 1
N -Channel MOSFET
S 2
N -Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
± 20
8.0
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
T A = 70 °C
I D
7.1
7.1 b, c
5.5 b, c
Pulsed Drain Current (10 μs Pulse Width)
I DM
30
A
Source-Drain Current Diode Current
Pulsed Source-Drain Current
T C = 25 °C
T A = 25 °C
I S
I SM
2.4
1.8 b, c
30
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I AS
E AS
10
5
mJ
T C = 25 °C
3.1
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
2
2 b, c
W
T A = 70 °C
1.28 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient b, d t ≤ 10 s
Maximum Junction-to-Foot (Drain) Steady State
Symbol
R thJA
R thJF
Typical
49
32
Maximum
62.5
40
Unit
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 120 °C/W.
Document Number: 68924
S-82485-Rev. A, 13-Oct-08
www.vishay.com
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